Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate
Résumé
Bismuth-Antimony alloys () is the first reported 3D Topological Insulator (TI). Among many TIs reported to the date, it remains the most promising for spintronic applications thanks to its large conductivity, its colossal spin Hall angle, and the possibility to build low current spin-orbit-torque (SOT) magnetoresistive random access memories (MRAM). Nevertheless, the 2D integration of TIs on industrial standards is lacking. In this work, we report the inte
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