Gallium phosphide transfer printing for integrated nonlinear photonics - Archive ouverte HAL
Conference Papers Year : 2021

Gallium phosphide transfer printing for integrated nonlinear photonics

Abstract

Integrated nonlinear photonics has drawn an increased interest as it provides scalable, compact, and low cost solutions for a large range of applications. Indeed, the high confinement of the light in integrated waveguides allows for enhanced nonlinear effects. However, mature highly nonlinear platforms such as silicon-on-insulator (SOI) circuits suffer from nonlinear losses at telecom wavelengths caused by two-photon absorption. Moreover, the platform lacks a second order nonlinear susceptibility, which is not the case for wide bandgap III-V semiconductors. Recently, gallium phosphide-on-insulator (GaP-OI) has been proposed as an efficient platform for second and third order nonlinear applications and last year we demonstrated as a proof of concept the transfer printing of GaP as a versatile technique for GaP hetero-integration.
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Dates and versions

hal-03392170 , version 1 (21-10-2021)

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Maximilien Billet, Nicolas Poulvellarie, Camiel Op de Beeck, Luis Reis, Yoan Léger, et al.. Gallium phosphide transfer printing for integrated nonlinear photonics. Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference 2021 (CLEO-Europe/EQEC 2021), Jun 2021, Munich, Germany. ⟨10.1109/CLEO/Europe-EQEC52157.2021.9541998⟩. ⟨hal-03392170⟩
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