Design and characterization of (140-220) GHz frequency compensated power detector
Issa Alaji
(1)
,
Sylvie Lepilliet
(1, 2)
,
Daniel Gloria
(3)
,
Guillaume Ducournau
(1, 4)
,
Christophe Gaquière
(1, 5)
Sylvie Lepilliet
- Fonction : Auteur
- PersonId : 745478
- IdHAL : sylvie-lepilliet
Guillaume Ducournau
- Fonction : Auteur
- PersonId : 745611
- IdHAL : guillaume-ducournau
- ORCID : 0000-0002-9171-4767
- IdRef : 090868382
Christophe Gaquière
- Fonction : Auteur
- PersonId : 746853
- IdHAL : christophe-gaquiere
- ORCID : 0000-0003-3082-2489
- IdRef : 059765615
Résumé
This article presents the design and characterization of a real-time frequency-compensated power detector (PD), based on NMOS transistor, integrated in SiGe 55-nm BiCMOS technology from STMicroelectronics, and dedicated to on-chip power detection in the G-band frequencies. An innovative simple circuit (named attenuator) is designed in order to compensate the variation of the voltage sensitivity value with frequency, which is established by exhibiting lower attenuation (smaller real part impedance) at higher frequencies. As a result, the measured sensitivity value is compensated with a small variation (1800 V/W±10%) over the frequency band (140-220) GHz. To the best of the authors' knowledge, this detector is the first design which proposes a real-time frequency compensation at such high- and large-frequency bands. The attenuator was also designed to exhibit an inductive impedance (in the G-band) in order to compensate the capacitive effect of the NMOS, which helps to use smaller NMOS size and, therefore, obtain a higher sensitivity value. Compared to recent works, our detector exhibits a performance belong the current state-of-the-art with a very low noise equivalent power (NEP) value 4.56 pW/ √Hz and a relatively high voltage sensitivity value.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Notice |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Design and characterization of (140-220) GHz frequency compensated power detector
|
Résumé |
en
This article presents the design and characterization of a real-time frequency-compensated power detector (PD), based on NMOS transistor, integrated in SiGe 55-nm BiCMOS technology from STMicroelectronics, and dedicated to on-chip power detection in the G-band frequencies. An innovative simple circuit (named attenuator) is designed in order to compensate the variation of the voltage sensitivity value with frequency, which is established by exhibiting lower attenuation (smaller real part impedance) at higher frequencies. As a result, the measured sensitivity value is compensated with a small variation (1800 V/W±10%) over the frequency band (140-220) GHz. To the best of the authors' knowledge, this detector is the first design which proposes a real-time frequency compensation at such high- and large-frequency bands. The attenuator was also designed to exhibit an inductive impedance (in the G-band) in order to compensate the capacitive effect of the NMOS, which helps to use smaller NMOS size and, therefore, obtain a higher sensitivity value. Compared to recent works, our detector exhibits a performance belong the current state-of-the-art with a very low noise equivalent power (NEP) value 4.56 pW/ √Hz and a relatively high voltage sensitivity value.
|
Auteur(s) |
Issa Alaji
1
, Sylvie Lepilliet
1, 2
, Daniel Gloria
3
, Guillaume Ducournau
1, 4
, Christophe Gaquière
1, 5
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
PCMP - IEMN -
Plateforme de Caractérisation Multi-Physiques - IEMN
( 1067502 )
- France
3
ST-CROLLES -
STMicroelectronics [Crolles]
( 23639 )
- 850 rue Jean Monnet BP 16 38926 Crolles
- France
4
PHOTONIQUE THZ - IEMN -
Photonique THz - IEMN
( 1067488 )
- Groupe Photonique THz - IEMN UMR8520 - (Terahertz Photonics)
- France
5
PUISSANCE - IEMN -
Puissance - IEMN
( 1067481 )
- Groupe Puissance - (Microwave Power Devices group) - IEMN UMR8520
- France
|
Nom de la revue |
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication |
2021-04
|
Date de publication électronique |
2021-03-10
|
Volume |
69
|
Numéro |
4
|
Page/Identifiant |
2352-2356
|
Référence interne |
|
Collaboration/Projet |
|
Domaine(s) |
|
Financement |
|
Mots-clés |
en
Broadband power detector (PD), diode-connected NMOS transistor, 55-nm BiCMOS, frequency compensated, G-band
|
DOI | 10.1109/TMTT.2021.3062054 |
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