Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates
Résumé
The mechanical stability of commercial GaP/Si templates during thermal annealing and subsequent growth of GaP and AlGaP using metal-organic chemical-vapour deposition is investigated. Although the as-grown GaP layer of the template originally presents an excellent surface morphology, annealing at temperatures between 645°C to 845°C to remove the native oxide prior to growth leads to plastic relaxation, accompanied by a variety of defects, including a dense grid of micro-twins. These micro-twins detrimentally affect GaP and AlGaP layers grown subsequently on the template.
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