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Article Dans Une Revue Microwave and Optical Technology Letters Année : 1999

Influence of the Source Inductance Parasitic Effect on the Conversion Gain of the HEMT Gate Mixer

Résumé

This paper examines the influence of the presence of source inductance on the conversion gain of a gate mixer. Two effects are observed: degradation of the gain, and an increase of the local oscillator level power necessary to obtain the maximum gain. Nonlinear simulations, theoretical calculations, as well as experimental data demonstrate that these effects become more important in the millimeter-wave range.

Dates et versions

hal-03360876 , version 1 (01-10-2021)

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Rachid Allam, Christophe Kolanowski, Jean-Marie Paillot, Claude Duvanaud, Y. Crosnier. Influence of the Source Inductance Parasitic Effect on the Conversion Gain of the HEMT Gate Mixer. Microwave and Optical Technology Letters, 1999, 22 (3), pp.149--151. ⟨10.1002/(SICI)1098-2760(19990805)22:3<149::AID-MOP1>3.0.CO;2-K⟩. ⟨hal-03360876⟩
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