Comparison between Bosch and STiGer Processes for Deep Silicon Etching - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Micromachines Année : 2021

Comparison between Bosch and STiGer Processes for Deep Silicon Etching

Résumé

The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented. Like the Bosch process, it consists in repeating cycles composed of an isotropic etching step followed by a passivation step. If the etching step is similar for both processes, the passivation step is a SiF4/O2 plasma that efficiently deposits a SiOxFy layer on the sidewalls only if the substrate is cooled at cryogenic temperature. In this paper, it is shown that the STiGer process can achieve profiles and performances equivalent to the Bosch process. However, since sidewall passivation is achieved with polymer free plasma chemistry, less frequent chamber cleaning is necessary, which contributes to increase the throughput.

Dates et versions

hal-03359000 , version 1 (29-09-2021)

Identifiants

Citer

Thomas Tillocher, Jack Nos, Gaëlle Antoun, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Comparison between Bosch and STiGer Processes for Deep Silicon Etching. Micromachines, 2021, 12 (10), pp.1143. ⟨10.3390/mi12101143⟩. ⟨hal-03359000⟩
46 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More