Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing
Arun Bhaskar
(1)
,
Justine Philippe
(1)
,
Etienne Okada
(1, 2)
,
Flavie Braud
(1, 3)
,
J.F. Robillard
(1, 4)
,
Cédric Durand
,
Frédéric Gianesello
(5)
,
Daniel Gloria
(5)
,
Christophe Gaquière
(1, 6)
,
Emmanuel Dubois
(4, 1)
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
4 MICROELEC SI - IEMN - Microélectronique Silicium - IEMN
5 ST-CROLLES - STMicroelectronics [Crolles]
6 PUISSANCE - IEMN - Puissance - IEMN
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
4 MICROELEC SI - IEMN - Microélectronique Silicium - IEMN
5 ST-CROLLES - STMicroelectronics [Crolles]
6 PUISSANCE - IEMN - Puissance - IEMN
Justine Philippe
- Fonction : Auteur
- PersonId : 748512
- IdHAL : justine-philippe
- ORCID : 0000-0001-7466-8327
Etienne Okada
- Fonction : Auteur
- PersonId : 745489
- IdHAL : etienne-okada
Flavie Braud
- Fonction : Auteur
- PersonId : 746842
- IdHAL : flavie-braud
- ORCID : 0000-0001-8807-6007
J.F. Robillard
- Fonction : Auteur
- PersonId : 747199
- IdHAL : jean-francois-robillard
- ORCID : 0000-0002-7170-7535
- IdRef : 132947110
Cédric Durand
- Fonction : Auteur
- PersonId : 763938
- ORCID : 0000-0002-1279-4966
Christophe Gaquière
- Fonction : Auteur
- PersonId : 746853
- IdHAL : christophe-gaquiere
- ORCID : 0000-0003-3082-2489
- IdRef : 059765615
Emmanuel Dubois
- Fonction : Auteur
- PersonId : 738944
- IdHAL : emmanuel-dubois-iemn
- ORCID : 0000-0002-0347-010X
- IdRef : 134290291
Résumé
With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially for the high throw count switches in RF frontends. In this context, a novel technique for local substrate removal is developed to fabricate membranes of mm-sized RF switch which allows for total etching of silicon handler. RF characterization of membranes reveal a superior linearity performance with lowering of 2 nd harmonic by 17.7 dB and improvement in insertion losses by 0.38 dB in comparison with High-Resistivity SOI substrates. This improvement leads to a significant increase in frontend efficiency. These results demonstrate a new route for optimization of circuit performance using post-fabrication substrate processing techniques.
Format du dépôt | Fichier |
---|---|
Type de dépôt | Pré-publication, Document de travail |
Titre |
en
Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing
|
Résumé |
en
With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially for the high throw count switches in RF frontends. In this context, a novel technique for local substrate removal is developed to fabricate membranes of mm-sized RF switch which allows for total etching of silicon handler. RF characterization of membranes reveal a superior linearity performance with lowering of 2 nd harmonic by 17.7 dB and improvement in insertion losses by 0.38 dB in comparison with High-Resistivity SOI substrates. This improvement leads to a significant increase in frontend efficiency. These results demonstrate a new route for optimization of circuit performance using post-fabrication substrate processing techniques.
|
Auteur(s) |
Arun Bhaskar
1
, Justine Philippe
1
, Etienne Okada
1, 2
, Flavie Braud
1, 3
, J.F. Robillard
1, 4
, Cédric Durand
, Frédéric Gianesello
5
, Daniel Gloria
5
, Christophe Gaquière
1, 6
, Emmanuel Dubois
4, 1
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
PCMP - IEMN -
Plateforme de Caractérisation Multi-Physiques - IEMN
( 1067502 )
- France
3
CMNF - IEMN -
Centrale de Micro Nano Fabrication - IEMN
( 1067406 )
- Groupe Centrale de Micro Nano Fabrication CMNF - IEMN UMR8520 -
Membre du réseau RENATECH des grandes centrales de Micro Nano Fabrication
- France
4
MICROELEC SI - IEMN -
Microélectronique Silicium - IEMN
( 1067492 )
- Groupe Microélectronique Silicium - IEMN UMR8520 - (Silicon Microelectronics group)
- France
5
ST-CROLLES -
STMicroelectronics [Crolles]
( 23639 )
- 850 rue Jean Monnet BP 16 38926 Crolles
- France
6
PUISSANCE - IEMN -
Puissance - IEMN
( 1067481 )
- Groupe Puissance - (Microwave Power Devices group) - IEMN UMR8520
- France
|
Licence |
Paternité - Pas d'utilisation commerciale - Pas de modification
|
Langue du document |
Anglais
|
Date de production/écriture |
2021-08-24
|
Domaine(s) |
|
Référence interne |
|
Financement |
|
Collaboration/Projet |
|
Projet(s) ANR |
|
Mots-clés |
en
RF/Microwave circuits, SOI technology, RF frontends, T/R switch, Substrate engineering
|
arXiv Id | 2109.09452 |
Origine :
Fichiers produits par l'(les) auteur(s)
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