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Conference Papers Year : 2014

Fabrication and characterization of CVD grown graphene based field-effect transistor

Abstract

In this work, we present both fabrication process and characterization of graphene field-effect transistors. Large scale monolayer graphene was grown by chemical vapor deposition (CVD) on Cu foils and transferred over pre-patterned back-gated devices on Si/SiO2 substrate. Scanning electron microscopy, Raman spectroscopy and Hall effect measurement were used for characterizing graphene quality before and after the transfer. It was found that monolayer graphene with a low defect density and hole mobility up to 3180cm(2)/Vs at n=1.3.10(12) cm(-2), could be obtained. For device characterization, devices with different gate length were discussed. We report an intrinsic current gain cut-off frequency (ft) of 15.5 GHz and maximum oscillation frequency of 12 GHz, deduced from the S-parameters measurements for device with gate length of 100 nm. This study demonstrates the potential of CVD-grown graphene for high speed electronics in combination with a technological process compatible with arbitrary substrates.
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hal-03335830 , version 1 (06-09-2021)

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Wei Wei, Geetanjali Deokar, Mohamed Moez Belhaj, D. Mele, Emiliano Pallecchi, et al.. Fabrication and characterization of CVD grown graphene based field-effect transistor. 44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014, Oct 2014, Rome, Italy. pp.367-370, ⟨10.1109/EuMC.2014.6986446⟩. ⟨hal-03335830⟩
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