Laser ablation of Ga-Sb-Te thin films monitored with quadrupole ion trap time-of-flight mass spectrometry - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of the American Ceramic Society Année : 2021

Laser ablation of Ga-Sb-Te thin films monitored with quadrupole ion trap time-of-flight mass spectrometry

Résumé

Laser ablation of Ga-Sb-Te chalcogenide thin films prepared by radiofrequency magnetron co-sputtering was monitored with quadrupole ion trap time-of-flight mass spectrometry (QIT-TOF-MS). The mass spectra of 11 thin films of various compositions (Ga: 0-53.1, Sb: 0-52.0, and Te: 0-100.0 at. %) were recorded. Several series of unary (Ga-x, Sb-y, and Te-z) binary (GaxSby, GaxTez, and SbyTez), and ternary GaxSbyTez clusters were identified in both positive and negative ion modes. Stoichiometry of observed clusters was determined. Up to 18 binary clusters (positively and negatively charged) were detected for thin film with low Sb content of 6.5 at. %. The highest number (4) of ternary clusters was observed for thin film with high Te content of 66.7 at. %. The number of generated clusters and their peaks intensity varied according to the chemical composition of thin films. Altogether, 41 clusters were detected. The laser ablation monitoring shows laser-induced fragmentation of thin film structure. The relation of clusters stoichiometries to the chemical composition of thin films is discussed. The fragmentation can be diminished by covering a surface of thin films with paraffin's, glycerol, or trehalose sugar thin layers. The stoichiometry of generated clusters shows partial structural characterization of thin films.
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Dates et versions

hal-03331051 , version 1 (08-09-2021)

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Govinda Mandal, Magdalena Gorylova, Virginie Nazabal, Petr Nemec, Josef Havel. Laser ablation of Ga-Sb-Te thin films monitored with quadrupole ion trap time-of-flight mass spectrometry. Journal of the American Ceramic Society, 2021, 104 (12), pp.6643-6652. ⟨10.1111/jace.18021⟩. ⟨hal-03331051⟩
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