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Communication Dans Un Congrès Année : 2016

Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts

Y. Morand
  • Fonction : Auteur
M. Gregoire
  • Fonction : Auteur

Résumé

We present experimental and simulated J-V characteristics of Metal/Insulator/Semiconductor (MIS) junctions aiming at improving the contact resistivity for advanced CMOS nodes. We show that an Atomic Layer Deposition (ALD)-based Al2O3 process may induce a native silicon oxide regrowth leading to an additional tunneling resistance in series. A modelling-based analysis of Metal/Insulator/Insulator/Metal (MIIS) contacts, including the potentially beneficial interfacial dipole, provides a new outlook on high-kappa/SiO2 bilayers for low resistivity contacts.
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Dates et versions

hal-03325002 , version 1 (24-08-2021)

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Citer

Julien Borrel, L. Hutin, H. Grampeix, E. Nolot, E. Ghegin, et al.. Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts. IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. pp.140-141, ⟨10.1109/SNW.2016.7578022⟩. ⟨hal-03325002⟩
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