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Article Dans Une Revue Journal of Physics D: Applied Physics Année : 2021

Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors

Cédric Masante
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Nicolas C. Rouger
Julien Pernot

Résumé

Diamond has been explored to develop prototypes of Field Effect Transistors (FET). At present time, different architectures are still under investigation mostly for power electronics applications, and well suited for high temperature and high radiation environments. Recently, Diamond Deep Depletion Metal-Oxide-Semiconductor FET (D3MOSFET) concept has been introduced and demonstrated as a good candidate to design efficient diamond MOSFETs. In this paper, a general introduction of the deep depletion concept is given. Then, the key issues concerning the design and fabrication of such kind of diamond MOSFETs are described and discussed in terms of quasi static performances (on state and off state). A demonstration of working regimes of a fabricated normally-on D3MOSFET is commented, reaching at least a 5.4 MV/cm critical field at a drain-source bias of-175 V, without electric field relaxation structures. The minimum on-state resistance was measured at R ON,S = 50 mΩ.cm 2 at 250 • C. Finally, the perspectives of the D3MOSFET is contextualized in a more global research effort to develop diamond power FETs. Some of the main challenges regarding the fabrication of competitive D3MOSFETs and more generally power diamond devices are discussed.
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Dates et versions

hal-03287047 , version 1 (15-07-2021)

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Cédric Masante, Nicolas C. Rouger, Julien Pernot. Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors. Journal of Physics D: Applied Physics, 2021, 54 (23), pp.233002. ⟨10.1088/1361-6463/abe8fe⟩. ⟨hal-03287047⟩
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