Sub-THz zero-bias detector with high performances based on heterostructure low barrier diode (HLBD) - Archive ouverte HAL Access content directly
Conference Papers Year : 2016

Sub-THz zero-bias detector with high performances based on heterostructure low barrier diode (HLBD)

F. Gamand
  • Function : Author
M. Thirault
  • Function : Author
M. Werquin
  • Function : Author
S. Jonniau
  • Function : Author
N. Thouvenin
  • Function : Author
N. Vellas
  • Function : Author

Abstract

Heterostructure low barrier diode (HLBD) based on AlGaInAs has been designed, fabricated and characterized for zero-bias millimetre-wave detection. Detectors with different heterostructures and various active areas have been tested in order to optimize their characteristics for low-level radiometric detection. We have measured the microwave performances of HLBD from DC to 220 GHz. A responsivity of 1700 V/W for unmatched diodes with a very low differential resistance of 256 Omega has been measured. A noise equivalent power (NEP) of about 1.3 pW/Hz(1/2) was then deduced. These performances make our diode easy to matched with 50 Omega circuits and particularly interesting for low-level sub-THz detection applications.
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Dates and versions

hal-03286180 , version 1 (13-07-2021)

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Cite

S. Nadar, Mohammed Zaknoune, X. Wallart, Christophe Coinon, Emilien Peytavit, et al.. Sub-THz zero-bias detector with high performances based on heterostructure low barrier diode (HLBD). 41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2016, Copenhagen, Denmark. ⟨10.1109/IRMMW-THz.2016.7758432⟩. ⟨hal-03286180⟩
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