Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films - Archive ouverte HAL
Article Dans Une Revue Nanomaterials Année : 2021

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Résumé

We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices.

Dates et versions

hal-03264118 , version 1 (17-06-2021)

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Citer

Fedor Kochetkov, Vladimir Neplokh, Viktoria Mastalieva, Sungat Mukhangali, Aleksandr Vorob’ev, et al.. Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films. Nanomaterials, 2021, 11 (6), pp.1503. ⟨10.3390/nano11061503⟩. ⟨hal-03264118⟩
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