[Invited] Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells - Archive ouverte HAL
Communication Dans Un Congrès Année : 2021

[Invited] Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

G. Fleury
T.S. Kulmala
  • Fonction : Auteur
T. Xu
  • Fonction : Auteur
D. Vanmaekelbergh
  • Fonction : Auteur

Résumé

Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. Here, we compare three lithographic patterning methods, e-beam lithography, block copolymer lithography and thermal scanning probe lithography to produce a honeycomb lattice in an In0.53Ga0.47As quantum well. We weigh up the pros and cons of each method to reach lattice constants smaller than 20 nm with a minimum of dispersion in the pore size.
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Dates et versions

hal-03261329 , version 1 (05-11-2021)

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Nathali Alexandra Franchina Vergel, C. Post, Francois Vaurette, Yannick Lambert, Dmitri Yarekha, et al.. [Invited] Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells. 5th IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2021, Apr 2021, Chengdu, China. pp.1-3, ⟨10.1109/EDTM50988.2021.9420884⟩. ⟨hal-03261329⟩
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