The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE - Archive ouverte HAL
Journal Articles Vacuum Year : 2020

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

Syrine Naceur
  • Function : Author
Mohsen Choubani
  • Function : Author
Badreddine Smiri
  • Function : Author
Hassen Maaref
  • Function : Author
Guillaume Monier
Institut Pascal
Christine Robert-Goumet
Institut Pascal
Larbi Sfaxi
  • Function : Author
Bernard Gruzza
  • Function : Author
Ridha Mghaieth
  • Function : Author

Abstract

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE, Vacuum,

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Materials Science [cond-mat.mtrl-sci] Micro and nanotechnologies/Microelectronics
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https://hal.science/hal-03016506

Submitted on : Friday, November 20, 2020-2:11:44 PM

Last modification on : Saturday, April 22, 2023-4:33:52 AM

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hal-03016506 , version 1 (20-11-2020)

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Syrine Naceur, Mohsen Choubani, Badreddine Smiri, Hassen Maaref, Guillaume Monier, et al.. The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE. Vacuum, 2020, 172, pp.109097. ⟨10.1016/j.vacuum.2019.109097⟩. ⟨hal-03016506⟩

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