Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO 2 nanoparticles - Archive ouverte HAL
Article Dans Une Revue Nanotechnology Année : 2021

Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO 2 nanoparticles

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hal-03249563 , version 1 (04-06-2021)

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Ruiling Gong, Edy Azrak, Celia Castro, Sébastien Duguay, Philippe Pareige, et al.. Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO 2 nanoparticles. Nanotechnology, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩. ⟨hal-03249563⟩
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