Valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber - Archive ouverte HAL
Article Dans Une Revue Semiconductor Science and Technology Année : 2019

Valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber

V Whiteside
  • Fonction : Auteur
B Magill
  • Fonction : Auteur
Matthew Lumb
  • Fonction : Auteur
M Meeker
  • Fonction : Auteur
R Mudiyanselage
  • Fonction : Auteur
S Vijeyaragunathan
  • Fonction : Auteur
I Vurgaftman
  • Fonction : Auteur
G Khodaparast
  • Fonction : Auteur
I Sellers
  • Fonction : Auteur

Résumé

In this study, detailed temperature dependent simulations for absorption and photogenerated recombination of hot electrons are compared with experimental data for an InAs/AlAsSb multi-quantum well. The simulations describe the actual photoluminescence (PL) observations accurately; in particular, the room temperature e1-hh1 simulated transition energy of 805 meV closely matches the 798 meV transition energy of the experimental PL spectra, a difference of only 7 meV. Likewise, the expected energy separations between local maxima (p1-p2) in the simulated/experimental spectra have a difference of just 2 meV: a simulated energy separation of 31 meV compared to the experimental value of 33 meV. Utilizing a non equilibrium generalized Planck relation, a full spectrum fit enables individual carrier temperatures for both holes and electrons. This results in two very different carrier temperatures for holes and electrons: where the hole temperature, T-h, is nearly equal to the lattice temperature, T-L; while, the electron temperature, T-e, is 'hot' (i.e., T-e > T-L). Also, by fitting the experimental spectra via three different methods a 'hot' carrier temperature is associated with electrons only; all three methods yield similar 'hot' carrier temperatures.
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Dates et versions

hal-03223029 , version 1 (10-05-2021)

Identifiants

Citer

V Whiteside, B Magill, Matthew Lumb, Hamidreza Esmaielpour, M Meeker, et al.. Valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber. Semiconductor Science and Technology, 2019, 34 (2), pp.025005. ⟨10.1088/1361-6641/aae4c3⟩. ⟨hal-03223029⟩
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