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Article Dans Une Revue IEEE Transactions on Circuits and Systems I: Regular Papers Année : 2021

Mm-wave through-load element for on-wafer measurement applications

Marc Margalef-Rovira
Abdelhalim Saadi
Manuel J. Barragan

Résumé

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50-Ω load depending on a DC control voltage. Among other potential applications, this system can be used to implement a transfer switch or an attenuator. A demonstrator was fabricated and measured in the STM 55-nm BiCMOS technology. Over a wide bandwidth, from 55 GHz up to 170 GHz, experimental measurements demonstrate a maximum 1.6-dB of insertion loss when behaving as a Through connection and a minimum 14-dB of insertion loss when behaving as a 50-Ω load. In both cases, the return loss is better than 10 dB. The insertion loss at 90 GHz is 0.6 dB for the Through connection and 20 dB for the 50-Ω load connection.
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Dates et versions

hal-03202213 , version 1 (19-04-2021)

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Citer

Marc Margalef-Rovira, Olivier Occello, Abdelhalim Saadi, Vanessa Avramovic, Sylvie Lepilliet, et al.. Mm-wave through-load element for on-wafer measurement applications. IEEE Transactions on Circuits and Systems I: Regular Papers, 2021, 68 (8), pp.3170-3183. ⟨10.1109/TCSI.2021.3072097⟩. ⟨hal-03202213⟩
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