Dispersive vs charge-sensing readout for linear quantum registers
Résumé
We present recent progress in the implementation of scalable schemes for spin qubit readout in one dimensional quantum registers based on fully-depleted silicon-on-insulator (FDSOI) technology. We compare two schemes both based on rf gate reflectometry. The first one, denoted as dispersive readout, minimizes the device overhead thereby facilitating scale-up to large qubit registers. The second one, denoted as charge-sensing readout, requires additional readout components but is less sensitive to the strength of the interdot coupling facilitating operation in the few-electron regime. We demonstrate single-shot charge sensing with a fidelity of 97% in 5 μs. Finally, we propose a scalable device architecture for linear qubit registers relying on charge-sensing readout.
Mots clés
Radio frequency
Qubit
Silicon-on-insulator
Reflectometry
Registers
Sensors
Dispersion
quantum computing
silicon-on-insulator
dimensional quantum registers
fully-depleted silicon-on-insulator technology
rf gate reflectometry
dispersive readout
charge-sensing readout
additional readout components
single-shot charge
linear qubit registers
linear quantum registers
scalable schemes
spin qubit readout