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Article Dans Une Revue European Physical Journal: Applied Physics Année : 2021

Nickel and gold identification in p-type silicon through TDLS: a modeling study

Résumé

In Silicon, impurities introduce recombination centers and degrade the minority carrier lifetime. It is therefore important to identify the nature of these impurities through their characteristics: the capture cross section σ and the defect level Et. For this purpose, a study of the bulk lifetime of minority carriers can be carried out. The temperature dependence of the lifetime based on the Shockley-Read-Hall (SRH) statistic and related to recombination through defects is studied. Nickel and gold in p-type Si have been selected for the SRH lifetime modeling. The objective of the analysis is to carry out a study to evaluate gold and nickel identification prior to temperature-dependent lifetime measurements using the microwave phase-shift (μW-PS) technique. The μW-PS is derived from the PCD technique and is sensitive to lower impurity concentrations. It has been shown that both gold and nickel can be unambiguously identified from the calculated TDLS curves.
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Dates et versions

hal-03196530 , version 1 (12-04-2021)

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Sarra Dehili, Damien Barakel, Laurent Ottaviani, Olivier Palais. Nickel and gold identification in p-type silicon through TDLS: a modeling study. European Physical Journal: Applied Physics, 2021, 93 (4), pp.40101. ⟨10.1051/epjap/2021210015⟩. ⟨hal-03196530⟩
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