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Article Dans Une Revue IEEE Microwave and Wireless Components Letters Année : 2018

10-Gb/s Indoor THz Communications Using Industrial Si Photonics Technology

Résumé

In this letter, we report the design, fabrication, and measurement of a silicon photonics-based transmitter (Tx) offering both mass production capability and high integration level potentiality. The Tx circuit consists of an integrated photodiode generating a 200-300-GHz signal for photonic upconversion from baseband to millimeter-wave. This Tx achieved output power in the range of -20 to -30 dBm over the 150-300-GHz frequency band is used to demonstrate an indoor 300-GHz wireless link. The receiver is using a commercial Schottky diode to enable direct detection. Amplitude modulation is successfully tested, and real-time bit error rates are shown for up to 10-Gb/s data rates.
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Dates et versions

hal-03183484 , version 1 (27-03-2021)

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Elsa Lacombe, Cybelle Belem-Gonçalves, Cyril Luxey, Frédéric Gianesello, Cédric Durand, et al.. 10-Gb/s Indoor THz Communications Using Industrial Si Photonics Technology. IEEE Microwave and Wireless Components Letters, 2018, 28 (4), pp.362-364. ⟨10.1109/LMWC.2018.2811242⟩. ⟨hal-03183484⟩
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