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Article Dans Une Revue IEEE Transactions on Microwave Theory and Techniques Année : 2019

Millimeter-wave noise source development on SiGe BiCMOS 55-nm technology for applications up to 260 GHz

Résumé

This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p-n and Schottky junction in series, realized on the SiGe BiCMOS 55-nm technology from STMicroelectronics. Biased in the avalanche regime, this integrated diode noise source achieves a tunable excess noise ratio (ENR) ranged between 0 dB and 15 dB, in the 130-260-GHz frequency range. In order to highlight the usefulness of the integrated noise source, the noise figure of two amplifiers was measured: the first one is an integrated low-noise amplifier (LNA) operating in the D-band (130-170 GHz) while the second one is packaged and operates from 220 to 260 GHz. Due to its ability to be naturally integrated on silicon, this noise source features a strong interest to carry out high-frequency in situ noise characterization of advanced Si CMOS or BiCMOS technologies in the mmW range.
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Dates et versions

hal-03133859 , version 1 (07-02-2021)

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Joao Carlos Azevedo Goncalves, Haitham Ghanem, Simon Bouvot, Daniel Gloria, Sylvie Lepilliet, et al.. Millimeter-wave noise source development on SiGe BiCMOS 55-nm technology for applications up to 260 GHz. IEEE Transactions on Microwave Theory and Techniques, 2019, 67 (9), pp.3732-3742. ⟨10.1109/TMTT.2019.2926289⟩. ⟨hal-03133859⟩
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