Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates
Résumé
Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our
group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask
with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto fexible substrates
was achieved. A more detailed study is needed to understand the efect of this selective area growth
on material quality, device performance and device transfer. Here we present a study performed on
two types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxial
growth to device performance and thermal dissipation measurements before and after transfer.
Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waals
liquid capillary bonding. It is shown that patterned samples lead to a better material quality as well
as improved electrical and optical device performances. In addition, patterned structures allowed for
a much better transfer yield to silicon substrates than unpatterned structures. We demonstrate that
SAVWE, combined with either transfer processes to soft or rigid substrates, ofers an efcient, robust
and low-cost heterogenous integration capability of large-size devices to silicon for photonic and
electronic applications.
Domaines
Sciences de l'ingénieur [physics]
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