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Article Dans Une Revue Micron Année : 2020

Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

Résumé

A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was investigated using a transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells were 4 nm and 6 nm, respectively. The QW layers were doped with Si to a concentration of (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).
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Dates et versions

hal-03118767 , version 1 (22-01-2021)

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K. Sobczak, J. Borysiuk, P. Strąk, R. Jakieła, K. Koroński, et al.. Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements. Micron, 2020, 134, pp.102864. ⟨10.1016/j.micron.2020.102864⟩. ⟨hal-03118767⟩
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