Second order nonlinear devices are at the basis of many present and future photonic applications, from modulation and frequency conversion to entanglement and quantum computing.1 The research community is thus constantly looking for materials presenting both great optical performances and simple fabrication, processing and integration capabilities. In this framework, gallium phosphide (GaP) has recently been presented as a promising material for such integrated devices.2 In the field of nonlinear optics, the advantages of GaP are known for long: it features a wide and indirect band-gap, limiting optical losses in a large optical and radiofrequency bandwidth and its nonlinear properties are good in comparison to other nonlinear materials. If very high frequency conversion efficiencies have already been reported in III-V photonic resonators, these demonstrations suffer from low reproducibility due to the strict selection rules imposed to the resonant modes involved in the nonlinear interaction. In this work we demonstrate the realization of high-quality factor microdisks made of GaP epitaxially grown on Si.This polar on non-polar material growth allows us to create in the GaP matrix a distribution of domains of opposite polarity with controlled size and proportion. We previously demonstrated that this random polarity can fully relax the phase matching selection rules of the second order nonlinear process limiting the required conditions to the double-resonance one.3 The growth methods and technological processes allowing us to realize these devices will be discussed as well as the first optical characterizations of their optical properties, in the framework of future nonlinear optics experiments. This work is funded by the French national research agency through the project ORPHEUS ANR-17-CE24-0019-01 and Région Bretagne and is supported by the NanoRennes technological platform, within Renatech network. 1.Wang, J., et al. Nat. Photonics 1–12 (2019) doi: 10.1038/s41566-019-0532-1 2.Wilson, D. J. et al. Nat. Photonics 1–6 (2019) doi: 10.1038/s41566-019-0537-9 3.Guillemé, P. et al.. Semicond. Sci. Technol. 32, 065004 (2017).