Monocrystalline graphene is desirable for practical applications since the large-scale polycrystalline graphene grown by chemical vapor deposition is limited in terms of performance. The transfer of graphene film from the metallic growth substrate to a host substrate, which is generally required for practical applications, can further damage the graphene by inducing strain, defects and wrinkles or by leaving contamination such as polymer residues. In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of copper oxidation on graphene prior to the transfer is also discussed. Our results show that the "Bubble-free" electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene with an almost defect free surface. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modify the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is submitted to a biaxial strain in compression, while graphene on Cu oxide is submitted to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects disappeared leaving a homogeneous graphene on the substrate. Finally, we used the transferred single crystal graphene on silicon oxide substrate to fabricate transmission line method (TLM) devices. These electrical measurements show low contact resistance ~150 Ω.µm, which confirms the homogeneity and good quality of transferred graphene. Therefore, electrochemical delamination process can be used to transfer large single crystal graphene in a fast and reliable way.