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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2020

Displacement Damage Effects in InGaAs Photodiodes due to Electron, Proton, and Neutron Irradiations

Résumé

A large set of InGaAs photodiodes from different manufacturers has been irradiated with electrons of 0.5-20 MeV, with protons of 60, 100, and 170 MeV, and with atmospheric-like neutron spectrum. Depending on the type of incident particles and energy, the deposited damage dose has been evaluated in the ~5 × 10 6 to 5 × 10 9 MeV/g range. The dark current damage factor has been extracted from measurements at different fluence levels. The dark current data right after irradiation and 2 months later allow for evaluating any possible annealing processes. The damage factor measured after about 2 months has been scaled with nonionizing energy loss (NIEL). Finally, the validity of NIEL scaling is discussed for InGaAs materials.
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Dates et versions

hal-03075355 , version 1 (16-12-2020)

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Thierry Nuns, Christophe Inguimbert, Juan Barbero, Juan Moreno, Samuel Ducret, et al.. Displacement Damage Effects in InGaAs Photodiodes due to Electron, Proton, and Neutron Irradiations. IEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1263-1272. ⟨10.1109/TNS.2020.2984133⟩. ⟨hal-03075355⟩

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