Design and Development of Single-Qubit Ion Trap on Glass and Si Substrates With RF Analysis and Performance Benchmarking
Résumé
This study presents the design and development of surface electrode ion traps on glass and Si substrate, as well as their RF characterizations and performance benchmarking. In this case, ion-trap on-glass shows superior performances in all necessary criteria. In terms of RF characterizations, ion-traps on glass have Q factor of greater than 900. This is significantly higher than the Q factor of its silicon counterparts, which are around 20-300. Such a high Q factor results in power spectral density (PSD) of greater than 10W/MHz. On the other hand, iontraps on-silicon produce PSD values of lower than 3W/MHz. In terms of RF performance, ion-trap on-glass shows insertion loss lower than 0.2 dB at 60MHz. This is more superior to insertion loss values of ion-traps on-silicon, which are around 1-4 dB. The ion-traps metallization is developed using three metallization layers (0.1µm Ti barrier layer, 2.5-3.7µm Cu, and 0.3µm Au) on top of dielectric. The on-chip resonance condition can be maintained upon the packaging integration. The laser optical setup for ion-trapping is verified to capture single 88 Sr + ion.
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