X-ray diffraction on La3Ga5SiO14 crystal modulated by SAW near the K absorption edge of Ga - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2020

X-ray diffraction on La3Ga5SiO14 crystal modulated by SAW near the K absorption edge of Ga

Résumé

The process of x-ray diffraction on the La 3 Ga 5 SiO 14 (LGS) crystal modulated by surface acoustic waves (SAWs) near the K absorption edge of Ga (E ¼ 10 367 eV) was studied. A redistribution of the diffracted x-ray intensity between the diffraction satellites occurs at the absorption edge due to the change in the x-ray penetration depth into the crystal and an effective change in the interaction of x-ray radiation with the near-surface crystal region modulated by SAW. The intensity distribution of the diffraction satellites starts to change smoothly immediately after the K absorption edge of Ga with a decrease in the x-ray penetration depth into the crystal.
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Dates et versions

hal-03063771 , version 1 (04-01-2021)

Identifiants

Citer

Dmitry Roshchupkin, Luc Ortega, Simone Vadilonga, Ivo Zizak, Eugenii Emelin, et al.. X-ray diffraction on La3Ga5SiO14 crystal modulated by SAW near the K absorption edge of Ga. Applied Physics Letters, 2020, 116 (17), pp.174101. ⟨10.1063/5.0002388⟩. ⟨hal-03063771⟩
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