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Communication Dans Un Congrès Année : 2019

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Résumé

We report on linearity and robustness of AlN/GaN HEMTs with ultra-thin 4nm AlN barrier for millimeter wave range applications. Static and dynamic I-V characteristics feature high peak transconductance (gmpeak) of 385 mS/mm, and the transconductance exhibits small changes with gate bias. Semi on-state step stress and 24 h stress tests have been carried out on representative AlN/GaN HEMTs on SiC substrate. No catastrophic failure was identified after semi on-state step stress at VGS =-1.5 V up to VDS = 100 V, whereas a gmpeak drop of 26 % was observed in these conditions. Moreover, 24 h stress carried out at different bias voltage along a load line show good robustness of these devices up to VDS = 25 V. In addition, an abrupt gate leakage current increase was identified to be field dependent, and associated with hot spots identified by electroluminescence measurements. Even in presence of a simple SiN passivation without air bridges or field plates, these devices exhibit high power added efficiency up to 40 GHz, thus demonstrating the great potential of AlN/GaN heterostructures.
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Dates et versions

hal-03048726 , version 1 (09-12-2020)

Identifiants

  • HAL Id : hal-03048726 , version 1

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Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, Veronica Gao Zhan, Carlo de Santi, et al.. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048726⟩
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