Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Luminescence Année : 2021

Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate

Résumé

The emergence of semiconductor nanowires (NWs) as a new class of functional materials has generated a great interest in the scientific community in the fields of electronics, photonics and energy. In this work, we report on the optical properties of telecom-band emitting InAs/InP quantum rod-nanowires (QR-NWs) grown on silicon substrates by gold catalyst assisted molecular beam epitaxy (MBE). The energies of A and B band transitions in wurtzite InAs QRs are numerically evaluated by finite element method (FEM) as a function of the QR geometry and strain and compared with the experimental results obtained from photoluminescence (PL). Temperature-dependent optical properties of the QR-NWs are studied revealing that the integrated PL intensity keeps up to 30% of its value at 14 K which testify a high stability of the PL intensity. Furthermore, the investigated nanostructure shows a room temperature emission wavelength at 1.55 μm. These results demonstrate a great promise for telecom-band III-V nanoemitters monolithically grown on silicon.
Fichier principal
Vignette du fichier
pagination_LUMIN_117814 2020.pdf (2.43 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03040324 , version 1 (04-12-2020)

Identifiants

Citer

Mohamed Helmi Hadj Alouane, Olfa Nasr, Hammadi Khmissi, Bouraoui Ilahi, Gilles Patriarche, et al.. Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate. Journal of Luminescence, 2021, 231, pp.117814. ⟨10.1016/j.jlumin.2020.117814⟩. ⟨hal-03040324⟩
97 Consultations
201 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More