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Article Dans Une Revue Acta Physica Polonica A Année : 2011

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

S. Lewinska
  • Fonction : Auteur
M. Gryglas-Borysiewicz
  • Fonction : Auteur
J. Przybytek
  • Fonction : Auteur
Benoit Jouault
U. Gennser
A. Ouerghi

Résumé

Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon delta-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.

Dates et versions

hal-03037525 , version 1 (03-12-2020)

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Citer

S. Lewinska, M. Gryglas-Borysiewicz, J. Przybytek, M. Baj, Benoit Jouault, et al.. Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions. Acta Physica Polonica A, 2011, 119 (5), pp.606-608. ⟨10.12693/APhysPolA.119.606⟩. ⟨hal-03037525⟩
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