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Journal Articles Applied Physics Letters Year : 2020

1/f Noise in epitaxial sidewall graphene nanoribbons

Abstract

We perform gate-and temperature-dependent low-frequency noise measurements on epitaxial graphene nanoribbons (epiGNRs) grown on the sidewalls of trenches etched in SiC substrates. We find that the measured noise spectra are dominated by 1=f noise, and the main source of the noise at high carrier densities is the long-range scatters (charge traps) at the epiGNR/gate-dielectric interface. Interestingly, our findings differentiate sidewall epiGNRs from previously studied lithographically patterned GNRs while exhibiting competitive noise characteristics similar to those in high-quality suspended graphene or graphene on hexagonal boron nitride substrates. These results provide confidence in potential epiGNR-based device applications in low-noise nanoelectronics.
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Dates and versions

hal-03037167 , version 1 (03-12-2020)

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O. Vail, J. Hankinson, Clément Berger, W. de Heer, Z. Jiang. 1/f Noise in epitaxial sidewall graphene nanoribbons. Applied Physics Letters, 2020, 117 (8), pp.083105. ⟨10.1063/5.0020926⟩. ⟨hal-03037167⟩
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