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Communication Dans Un Congrès Année : 2019

Optimization of resistive memories using In2O3 nanostructures integration with a CMOS Back-End-Off-Line process

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hal-03029510 , version 1 (28-11-2020)

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  • HAL Id : hal-03029510 , version 1

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Abdelkader Souifi, Pierre-Vincent Guenery, D. Deleruyelle, Liviu Militaru, J. Moeyaert, et al.. Optimization of resistive memories using In2O3 nanostructures integration with a CMOS Back-End-Off-Line process. Annual Conference on Nanotechnology and Advanced Materials, Nov 2019, San Francisco, United States. ⟨hal-03029510⟩
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