Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction - Archive ouverte HAL Access content directly
Journal Articles Nanotechnology Year : 2020

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Lorenzo Rigutti
E Monroy

Abstract

A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe tomography, electron holography and secondary ion mass spectrometry has been performed in order to investigate the nm-scale distribution of both Mg and Ge at the TJ. Experimental results reveal that Mg segregates at the TJ interface, and diffuses into the Ge-doped layer. As a result, the dopant concentration and distribution differ significantly from the nominal values. Despite this, electron holography reveals a TJ depletion width of ~7 nm, in agreement with band diagram simulations using the experimentally determined dopant distribution.
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Dates and versions

hal-03024837 , version 1 (26-11-2020)

Identifiers

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E. Di Russo, A. Mavel, V Fan Arcara, B. Damilano, Ioanna Dimkou, et al.. Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction. Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩. ⟨hal-03024837⟩
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