General framework about defect creation at the Si/SiO2 interface
Résumé
This paper presents a theoretical framework about interface state creation rate from Si–H bonds at
the Si/SiO2 interface. It includes three main ways of bond breaking. In the first case, the bond can
be broken, thanks to the bond ground state rising with an electrical field. In two other cases, incident
carriers will play the main role either if there are very energetic or very numerous but less energetic.
This concept allows one to physically model the reliability of metal oxide semiconductor field effect
transistors, and particularly negative bias temperature instability permanent part, and channel hot
carrier to cold carrier damage.