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Article Dans Une Revue ACS Applied Electronic Materials Année : 2020

Epitaxial Ferroelectric La-Doped Hf 0.5 Zr 0.5 O 2 Thin Films

Résumé

Doping ferroelectric Hf 0.5 Zr 0.5 O 2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of the retention. We have investigated the endurance-retention dilemma in La-doped epitaxial films. Compared to undoped epitaxial films, large values of polarization are obtained in a wider thickness range, whereas the coercive fields are similar, and the leakage current is substantially reduced. Compared to polycrystalline La-doped films, epitaxial La-doped films show more fatigue but there is not significant wake-up effect and endurance-retention dilemma. The persistent wake-up effect common to polycrystalline La-doped Hf 0.5 Zr 0.5 O 2 films, is limited to a few cycles in epitaxial films. Despite fatigue, endurance in epitaxial La-doped films is more than 10 10 cycles, and this good property is accompanied by excellent retention of more than 10 years. These results demonstrate that wake-up effect and endurance-retention dilemma are not intrinsic in La-doped Hf 0.5 Zr 0.5 O 2 .
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Dates et versions

hal-03016969 , version 1 (20-11-2020)

Identifiants

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Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Raul Solanas, Ignasi Fina, et al.. Epitaxial Ferroelectric La-Doped Hf 0.5 Zr 0.5 O 2 Thin Films. ACS Applied Electronic Materials, 2020, 2 (10), pp.3221-3232. ⟨10.1021/acsaelm.0c00560⟩. ⟨hal-03016969⟩
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