Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Express Year : 2020

Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping

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hal-03013787 , version 1 (03-01-2022)

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Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe de Mierry, Marc Portail, et al.. Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping. Applied Physics Express, 2020, 13 (11), pp.115504. ⟨10.35848/1882-0786/abc1cd⟩. ⟨hal-03013787⟩
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