Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2020

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

Fichier non déposé

Dates et versions

hal-02991460 , version 1 (07-01-2021)

Identifiants

Citer

M. Casse, B. Cardoso Paz, G. Ghibaudo, T. Poiroux, S. Barraud, et al.. Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance. IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4636-4640. ⟨10.1109/TED.2020.3022607⟩. ⟨hal-02991460⟩
43 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More