Switching Optimization of WBG Power Devices on Inverter Leg
Résumé
In this paper the authors are interested by the switching optimisation of a SiC Power MOSFET in an inverter leg. The authors explain their efforts to build a test-bench that allows the extremely fast switching measurement of this WBG (Wide Band-Gap) component. Then trade-off curves between the dv/dt versus the switching energy are presented. The parameters are the external gate resistor and an additional gate-drain capacitor. Finally, basic dv/dt models are proposed and compared with the experimental results.
Domaines
Energie électrique
Fichier principal
Switching optimization of WBG power devices on inverter leg_Timothe Rossignol_LAPLACE_PCIM2013.pdf (1.34 Mo)
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