Trapping in 1nm EOT high-k/MG
Résumé
on PFET's with EOT~ 1 nm shows a large hysteresis at high field in the Id-Vg characteristics, while nothing is sensed for nmos devices. An advanced charge pumping technique proves that this hysteresis in pmos is caused by hole traps in the high-k. Furthermore, we show how NBTI defects are affected correlated with such hole traps. We will demonstrate how optimization of the nitridation process can strongly reduce the hole trap density. Phase separation in the HfSiON can be detected by this simple hole trap measurements.