Communication Dans Un Congrès Année : 2017

Mobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process

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hal-02952130 , version 1 (29-09-2020)

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Lionel Trojman, Diego Benalcazar, Luis Procel, Guillaume Jobard. Mobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process. 2017 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC), Nov 2017, Ixtapa, Mexico. pp.1-6, ⟨10.1109/ROPEC.2017.8261677⟩. ⟨hal-02952130⟩

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