Effect of Sputtering Atmosphere on ZnSnN2 Thin Films Electrical and Optoelectronic Properties
Résumé
ZnSnN2 thin films were produced on glass substrates by co-sputtering Zn and Sn targets at room temperature in a reactive atmosphere of argon, nitrogen and hydrogen. By changing the composition of this atmosphere, the optical and electrical properties of material are changed. The morphology and crystal structure were investigated by using SEM, AFM and X-ray diffraction. The optical band gap ranges from 1.80 eV to 2.13 eV and was deduced from UV-VIS spectroscopy. The n-type carrier concentration was measured between 2.5 x 1017 and 1.0 x 1020 cm-3 and the highest carrier mobility is 2.0 cm2V-1s-1. First photoconductive samples were fabricated and tested under solar simulator. Measurement gave a photocurrent value of 150 mA/cm2. These results are promising ones for the potential application of ZnSnN2 material as a photovoltaic absorber.