On the use of exchange biased top electrodes in magnetic tunnel junctions - Archive ouverte HAL
Article Dans Une Revue Journal of Magnetism and Magnetic Materials Année : 2004

On the use of exchange biased top electrodes in magnetic tunnel junctions

Résumé

We have investigated the magnetic behavior and the structural properties of ferromagnetic-antiferromagnetic systems (NiFe-IrMn and Co-IrMn) deposited directly on a thin tantalum buffer layer (bottom configuration) or above a thin Al 2 O 3 tunnel barrier layer (top configuration). In the bottom configuration, the bilayer system exhibits higher magnetic performances than in the top configuration in terms of thermal stability. We have performed a detailed structural study by X-ray diffraction and high-resolution transmission electron microscopy which allow us to establish a clear correlation between the situation of the bilayer with respect to the tunnel barrier, its texture and its magnetic properties. r

Dates et versions

hal-02949342 , version 1 (29-09-2020)

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D Lacour, O. Durand, J.-L. Maurice, H. Jaffrès, F. Nguyen van Dau, et al.. On the use of exchange biased top electrodes in magnetic tunnel junctions. Journal of Magnetism and Magnetic Materials, 2004, 270 (3), pp.403-406. ⟨10.1016/j.jmmm.2003.09.007⟩. ⟨hal-02949342⟩
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