Large inverse magnetoresistance in fully epitaxial Fe∕Fe3O4∕MgO∕Co magnetic tunnel junctions - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2008

Large inverse magnetoresistance in fully epitaxial Fe∕Fe3O4∕MgO∕Co magnetic tunnel junctions

F. Greullet
  • Fonction : Auteur
C. Tiusan
M. Hehn
D Lacour
O. Lenoble
  • Fonction : Auteur

Résumé

Fully epitaxial Fe(001)∕Fe3O4(001)∕MgO(001)∕Co micron-sized magnetic tunnel junctions have been elaborated on MgO(001) substrates. X-ray reflectivity and high-resolution transmission electron microscopy revealed a good quality and epitaxial growth of the stack with abrupt interfaces. The magnetotransport measurements exhibit a large negative tunneling magnetoresistance (TMR) value for magnetic tunnel junctions including an Fe3O4 layer and a MgO tunnel barrier (−8.5% at 300K and −22% at 80K). Moreover, the sign of the TMR changes with the applied bias. We discuss here the structural quality of the samples and the transport measurement results.
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Dates et versions

hal-02949210 , version 1 (25-09-2020)

Identifiants

Citer

F. Greullet, Etienne Snoeck, C. Tiusan, M. Hehn, D Lacour, et al.. Large inverse magnetoresistance in fully epitaxial Fe∕Fe3O4∕MgO∕Co magnetic tunnel junctions. Applied Physics Letters, 2008, 92 (5), pp.053508. ⟨10.1063/1.2841812⟩. ⟨hal-02949210⟩
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