Fast electro-optics effect in strained silicon waveguide - Archive ouverte HAL Access content directly
Conference Papers Year : 2019

Fast electro-optics effect in strained silicon waveguide

Guillaume Marcaud
Xavier Le Roux
  • Function : Author
Alonso-Ramos Carlos
  • Function : Author
  • PersonId : 741127
  • IdHAL : carlosramos
Christian Lafforgue
  • Function : Author
Pedro Damas
  • Function : Author
Diego Pérez-Galacho
  • Function : Author
Daniel Benedikovic
  • Function : Author
Vladyslav Vakarin
  • Function : Author
Alicia Ruiz-Caridad
  • Function : Author
Paul Crozat
  • Function : Author
Delphine Marris-Morini
Eric Cassan
  • Function : Author
Laurent Vivien


Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. However, Silicon is a centrosymmetric semiconductor, which cannot exhibit any second order optical nonlinearities, like second harmonic generation nor the linear electro-optic effect (i.e. Pockels effect). Nonetheless, by means of strain gradients, generated by depositing a stressed layer (typically SiN) on silicon waveguides, this restriction vanishe. Hence, for years, many attempts on characterizing the second order nonlinear susceptibility tensor through Pockels effect have been performed. However, due to the semiconductor nature of silicon, its analysis has been wrongly carried out. Indeed, carriers in Si, at the Si/SiN interface and in SiN have a screening effect when performing electro-optic modulation, which have led to overestimations of the second order nonlinear susceptibility and eventually rose a controversy on the real existence of Pockels effect in strained silicon waveguides. Here, we report on unambiguous experimental characterization of Pockels effect in the microwave domain, by taking advantage of the inherent limitation of carrier effect in high frequency range. Recent results on high-speed measurements will be presented and discussed. Both charge effects and Pockels effect induced under an electric field will be also analysed.
No file

Dates and versions

hal-02936242 , version 1 (11-09-2020)


  • HAL Id : hal-02936242 , version 1


Mathias Berciano, Guillaume Marcaud, Xavier Le Roux, Alonso-Ramos Carlos, Christian Lafforgue, et al.. Fast electro-optics effect in strained silicon waveguide. Proceedings Volume 10922, Smart Photonic and Optoelectronic Integrated Circuits XXI; 109221Q (2019), Mar 2019, San Francisco, United States. ⟨hal-02936242⟩
26 View
1 Download


Gmail Facebook X LinkedIn More