‘Influence of neutrons irradiation on electrical traps existing in GaN-based transistors’ - Archive ouverte HAL
Journal Articles IEEE Transactions on Nuclear Science Year : 2016

‘Influence of neutrons irradiation on electrical traps existing in GaN-based transistors’

F. Berthet
  • Function : Author
S. Petitdidier
  • Function : Author
Y. Guhel
  • Function : Author
Laboratoire Universitaire des Sciences Appliquées de Cherbourg
J.L. Trolet
  • Function : Author
P. Mary
  • Function : Author
Christophe Gaquière
B. Boudart
  • Function : Author

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Engineering Sciences [physics]

Yannick Guhel  : Connect in order to contact the contributor

https://hal.science/hal-02936082

Submitted on : Friday, September 11, 2020-12:54:10 AM

Last modification on : Tuesday, January 23, 2024-12:28:53 PM

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hal-02936082 , version 1 (11-09-2020)

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  • HAL Id : hal-02936082 , version 1

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F. Berthet, S. Petitdidier, Y. Guhel, J.L. Trolet, P. Mary, et al.. ‘Influence of neutrons irradiation on electrical traps existing in GaN-based transistors’. IEEE Transactions on Nuclear Science, 2016. ⟨hal-02936082⟩

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