‘First results of AlGaN/GaN HEMTs on sapphire substrate using an argon ion implant isolation technology’

M. Werquin; N. Vellas; Y. Guhel; D. Ducatteau; B. Boudart; J. C. Pesant; Z. Bougrioua; M. Germain; Jean-Claude de Jaeger; Christophe Gaquière

Journal Articles Microwave and Optical Technology Letters Year : 2005

‘First results of AlGaN/GaN HEMTs on sapphire substrate using an argon ion implant isolation technology’

, , (1) , , , , , , ,

1

M. Werquin

Function : Author

N. Vellas

Function : Author

Y. Guhel

Function : Author

Laboratoire Universitaire des Sciences Appliquées de Cherbourg

D. Ducatteau

Function : Author

B. Boudart

Function : Author

J. C. Pesant

Function : Author

Z. Bougrioua

Function : Author
PersonId : 180745
IdHAL : zahia-bougrioua
ORCID : 0000-0003-3579-7091
IdRef : 113374135

M. Germain

Function : Author

Jean-Claude de Jaeger

Function : Author
PersonId : 747322
IdHAL : jean-claude-dejaeger

Christophe Gaquière

Function : Author
PersonId : 746853
IdHAL : christophe-gaquiere
ORCID : 0000-0003-3082-2489
IdRef : 059765615

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Engineering Sciences [physics]

Yannick Guhel : Connect in order to contact the contributor

https://hal.science/hal-02936058

Submitted on : Thursday, September 10, 2020-11:55:43 PM

Last modification on : Thursday, March 10, 2022-1:38:07 PM

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hal-02936058 , version 1 (10-09-2020)

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HAL Id : hal-02936058 , version 1

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M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, et al.. ‘First results of AlGaN/GaN HEMTs on sapphire substrate using an argon ion implant isolation technology’. Microwave and Optical Technology Letters, 2005. ⟨hal-02936058⟩

‘First results of AlGaN/GaN HEMTs on sapphire substrate using an argon ion implant isolation technology’

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