‘Effects of high temperature on the electrical behaviour of AlGaN/GaN HEMTs’
Résumé
High-temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high-temperature electrical measurements have also shown the existence of electrical traps. These traps are sensitive to the bias point, the illumination, and the temperature