Erbium-doped Yttria-stabilized Zirconia thin layers for photonic applications
Résumé
Near-infrared (near-IR) integrated photonic devices in silicon based platforms have been studied over the last decades for applications such as on-chip optical communications and sensing. Hybrid integration of functional oxides to search the limits of low power consumption has been a challenge overcome by material engenieering. In this regard, Yttria-Stabilized Zirconia (YSZ) stands as an interesting material for its structural, chemical and optical properties which includes transparency range from the visible to the mid-IR wavelength range. In this regard, we recently demonstrated YSZ waveguides with propagation losses as low as 2 dB/cm at a wavelength of 1380 nm [2]. Based on the encouraging preliminary results, we have recently explored the possibility to introduce active rare-earth dopants into YSZ waveguides to demonstrate on-chip optical amplifiers based on YSZ. In this study, we introduced multilayer approach depositing by pulsed laser deposition (PLD) technique by Er 3+ ions, providing outstanding luminescence around λ = 1.54 µm, in correspondence with C-band of telecommunications. Such active layers have been grown onto different platforms, including SiN and sapphire. The optical properties of Er-doped YSZ thin films growth on waveguides under resonant pumping will be discussed in this paper. These results pave the way towards the implementation of new rare-earth-doped functional oxides into hybrid photonic platforms in a customized and versatile manner, adding light amplification functionalities.
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